| DOI | Resolve DOI: https://doi.org/10.1116/1.1676446 |
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| Author | Search for: Abdalla, S.; Search for: Ng, S.; Search for: Celo, D.; Search for: El-Mougy, S.; Search for: Smy, T.; Search for: Syrett, B.; Search for: Barrios, P.1; Search for: Delâge, A.1; Search for: Golub, I.1; Search for: Janz, S.1; Search for: McKinnon, R.1; Search for: Poole, P.1; Search for: Raymond, S.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Eleventh Canadian Semiconductor Technology Conference, 18-22 August 2003, Ottawa, Canada |
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| Abstract | Optical switching using a dynamic local index gradient induced in an InGaAsP/InP Y-junction waveguide switch is investigated using optical, electrical, and thermal simulations, and demonstrated experimentally. Switching is accomplished by creating a steep index gradient in the optical path near the Y junction. Both simulations and experiments indicate that either carrier injection or the thermo-optic effect can be used as the active switching mechanism. For carrier injection the induced index change under the electrode, Δn, is negative. The measured switch contrast ratio is about 20 dB, with a response time of approximately 5 ns. The thermo-optic effect gives a positive Δn, and the observed contrast ratio is about 10 dB. The thermo-optic switch response time is several hundred nanoseconds, due to the highly localized nature of the thermal gradient. |
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| Publication date | 2004 |
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| In | |
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| Language | English |
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| NPARC number | 12744086 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | ec384f5a-5d64-4a06-b77d-82e1a954f2b8 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-17 |
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