Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition
Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition
DOI | Resolve DOI: https://doi.org/10.1088/0957-4484/23/6/065603 |
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Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
Format | Text, Article |
Subject | Different substrates; Elemental compositions; Growth behaviour; Growth morphology; Kinetic control; Laser repetition rate; Morphological evolution; Nanostenciling; Repetition rate; Si(1 0 0); Si/Ge; Stranski-Krastanov growth; Stranski-Krastanov growth mode; Wetting layer; Atomic force microscopy; Atomic spectroscopy; Germanium; Programmable logic controllers; Pulse repetition rate; Pulsed laser deposition; Raman spectroscopy; Scanning electron microscopy; Pulsed lasers |
Abstract | |
Publication date | 2012-01-17 |
In | |
Language | English |
Peer reviewed | Yes |
NRC publication | This is a non-NRC publication"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC. |
NPARC number | 21270273 |
Export citation | Export as RIS |
Report a correction | Report a correction (opens in a new tab) |
Record identifier | ec1bdbf3-5edd-414f-a207-fd86cc7bacac |
Record created | 2014-01-20 |
Record modified | 2020-04-21 |
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