Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/0957-4484/23/6/065603
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FormatText, Article
SubjectDifferent substrates; Elemental compositions; Growth behaviour; Growth morphology; Kinetic control; Laser repetition rate; Morphological evolution; Nanostenciling; Repetition rate; Si(1 0 0); Si/Ge; Stranski-Krastanov growth; Stranski-Krastanov growth mode; Wetting layer; Atomic force microscopy; Atomic spectroscopy; Germanium; Programmable logic controllers; Pulse repetition rate; Pulsed laser deposition; Raman spectroscopy; Scanning electron microscopy; Pulsed lasers
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LanguageEnglish
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NPARC number21270273
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Record created2014-01-20
Record modified2020-04-21
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