Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation
Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation
| DOI | Resolve DOI: https://doi.org/10.1016/0921-5107(95)01333-4 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1995 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1172 |
| NPARC number | 8898843 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | e91572f7-10f0-4968-943b-7c779f3b5981 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-29 |
- Date modified: