| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.86.085409 |
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| Author | Search for: Bernard, S.; Search for: Whiteway, E.; Search for: Yu, V.; Search for: Austing, D.G.1; Search for: Hilke, M. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Using very uniform large-scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a D+D′ peak corresponding to a double-phonon process involving both an inter- and intravalley phonon. © 2012 American Physical Society. |
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| Publication date | 2012 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269561 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | e90b058a-77d4-4808-9c30-d4b7a67bf11b |
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| Record created | 2013-12-12 |
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| Record modified | 2020-04-21 |
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