Photoreflectance and photoluminescence spectroscopies of In-doped CdMnTe/CdTe multiple quantum wells and superlattices

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Proceedings titleProceedings of SPIE
ConferenceLaser-Induced Thin Film Processing, February 8, 1995, San Jose, CA, USA
AbstractMultiple quantum wells and superlattices of CdMnTe/CdTe were grown epitaxially on CdZnTe using Pulsed Laser Evaporation and Epitaxy from indium doped Cd.85Mn.15Te and high purity CdTe targets. The photoreflectance and photoluminescence spectra were collected at T equals 5-10 K. In addition to the photoreflectance signatures originating from the CdZnTe substrate, CdTe buffer layer and CdMnTe barrier layers, the spectra also display features that are attributed to optical transitions occurring within the CdTe quantum wells. The signatures were observed in several heterostructures with [001], [111], and [112] crystal orientations.
AffiliationNational Research Council Canada; NRC Institute for Chemical Process and Environmental Technology
Peer reviewedNo
NPARC number12328636
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Record identifiere8113b6a-e82f-45ca-bacf-9a72caf16cf9
Record created2009-09-10
Record modified2016-05-09
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