DOI | Resolve DOI: https://doi.org/10.1016/j.optcom.2012.07.002 |
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Author | Search for: Jiao, Z. J.1; Search for: Lu, Z. G.1; Search for: Liu, J. R.1; Search for: Poole, P. J.1; Search for: Barrios, P. J.1; Search for: Poitras, D.1; Search for: Pakulski, G.1; Search for: Caballero, J.1; Search for: Zhang, X. P. |
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Affiliation | - National Research Council of Canada. Information and Communication Technologies
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Format | Text, Article |
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Subject | InAs/InP quantum dot lasers; linewidth enhancement factor; injection locking technique; Hakki–Paoli method |
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Abstract | Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) emitting around 1.5 μm is investigated both above and below the threshold. Above the threshold, LEFs at three different wavelengths around the gain peak of 1.53 μm by the injection locking technique are obtained to be 1.63, 1.37 and 1.59. Then by Hakki–Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below the threshold. These small LEF values have clearly indicated that our developed InAs/InP QDs are perfect and promising gain materials for QD MWLs, QD mode-locked lasers (QD MLLs) and QD distributed-feedback (QD DFB) lasers around 1.5 μm. |
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Publication date | 2012-07-17 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21268057 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | e424ba2f-a8cf-4a98-8a66-be51cf427f59 |
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Record created | 2013-04-05 |
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Record modified | 2020-04-21 |
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