Rapid thermal processing of buried Si[1-x]Ge[x]/Si strained layers: photoluminescence decay and misfit dislocation generation
Rapid thermal processing of buried Si[1-x]Ge[x]/Si strained layers: photoluminescence decay and misfit dislocation generation
Author | Search for: ; Search for: |
---|---|
Sponsor | Search for: MRS |
Format | Text, Article |
Conference | Epitaxial heterostructures : symposium, April 16-19, 1990, San Francisco, California, USA |
ISSN | 0272-9172 |
ISBN | 1558990879 |
Language | English |
NRC number | NRC-INMS-1194 |
NPARC number | 8898469 |
Export citation | Export as RIS |
Report a correction | Report a correction (opens in a new tab) |
Record identifier | e3e88a1d-786e-4380-9436-03f9b6786b07 |
Record created | 2009-04-22 |
Record modified | 2020-04-16 |
- Date modified: