| DOI | Resolve DOI: https://doi.org/10.1557/PROC-402-587 |
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| Author | Search for: Sham, T.K.; Search for: Naftel, S.J.; Search for: Bzowski, A.; Search for: Das, S.R.1; Search for: Xu, D.-X.1; Search for: Heald, S.M.; Search for: Brewe, D.; Search for: Kuhn, M. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1995 MRS Fall Meeting: Symposium H: Silicide Thin Films-Fabrication, Properties and Applications, November 27-30, 1995, Boston, Massachusetts, U.S.A. |
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| Abstract | PtSi thin films prepared by UHV sputter-deposition procedures on n-type Si(100) wafers have been studied with the following techniques: (a) X-ray absorption fine structure spectroscopy at the Si K-edge, Si L2,3-edge, and Pt L3-edge; (b) X-ray reflectivity at photon energies below and above the Pt L3-edge threshold and (c) Photoemission. These techniques provide valuable information about the electronic structure, morphology, local structure, thickness, density and roughness, and surface and interface properties of the films. Preliminary results from the application of these techniques to the study of several PtSi thin films (with thickness from several hundreds to thousands of Å) are reported. |
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| Publication date | 1996 |
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| Series | |
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| NPARC number | 12329050 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | e3a93dd0-5eb1-4b00-a389-034d192aeea9 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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