Process dependence of the SiO[sub 2]/Si(100) interface structure

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.359494
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
SubjectANNEALING; FILM GROWTH; INTERFACES; PHOTOELECTRON SPECTROSCOPY; RELAXATION; SILICON; SILICON OXIDES; STRAINS; SYNCHROTRON RADIATION
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LanguageEnglish
NPARC number12337927
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Record identifiere3079d7d-3e3c-4aa1-be09-1afc3d7bf8ca
Record created2009-09-10
Record modified2020-04-29
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