Evidence from electrical transport and photoluminescence spectroscopy of a band of localized deep donors in high-purity n-type InP grown by chemical-beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1103/PhysRevB.50.16964
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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LanguageEnglish
Peer reviewedYes
NPARC number12338540
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Record identifierde297275-d581-4e95-b558-02d5dfba2a77
Record created2009-09-10
Record modified2020-04-27
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