DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.50.16964 |
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Author | Search for: Benzaquen, R.1; Search for: Benzaquen, M.; Search for: Charbonneau, S.1; Search for: Poole, P. J.1; Search for: Rao, T. Sudersena1; Search for: Lacelle, C.1; Search for: Roth, A.P.; Search for: Leonelli, R. |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Abstract | We have measured the Hall mobility and Hall electronic concentration as a function of temperature of three low-compensation n-type InP epilayers of similar thickness grown by chemical-beam epitaxy. The Hall mobility of the samples was found to be exceptionally high at 77 K and significantly depressed at 300 K. Above the freeze-out region, strong Hall electronic excitation was consistently observed in the temperature range of ?35�300 K. These features are in excellent agreement with a model accounting for a broad band of localized deep-donor centers or complexes of unknown origin, centered at 160 meV below the conduction band. In addition, all samples showed an anomalous metal-like behavior at the lowest temperatures, instead of the expected strong localization regime. A broad luminescent band of ?11-meV linewidth linked to the presence of the band of deep donors was observed below the acceptor bound-exciton transition. Time-resolved photoluminescence and photoluminescence-excitation measurements supported the bound-exciton nature of the luminescent band. |
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Publication date | 1994-12-15 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 12338540 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | de297275-d581-4e95-b558-02d5dfba2a77 |
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Record created | 2009-09-10 |
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Record modified | 2020-04-27 |
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