Demonstration of an ion-implanted, wavelength-shifted quantum-well laser

From National Research Council Canada

DOI	Resolve DOI: https://doi.org/10.1109/68.475763
Author	Search for: Poole, P. J.¹; Search for: Charbonneau, S.¹; Search for: Dion, M.¹; Search for: Aers, G. C.¹; Search for: Buchanan, M.¹; Search for: Goldberg, R. D.; Search for: Mitchell, I. V.
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Subject	bandgap shifting; blue shift; broad-area laser; fabrication; III-V semiconductors; indium compounds; InP; ion implantation; optical fabrication; quantum well lasers; quantum-well laser; spectral line shift; threshold current; wafer integration; wavelength shifting
Abstract	A technique for fabricating many different wavelength lasers on the same wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully functional broad-area lasers whose current threshold was unaffected by the implantation process, indicating extremely high material quality after bandgap-shifting. This process has the potential for the integration of not only different wavelength lasers, but also other devices, such as waveguides, detectors, modulators, etc., on a single wafer.
Publication date	1996-01
In	Photonics Technology Letters, IEEE 8, no. 1 (January 1996): 16–18.
Language	English
NPARC number	12328778
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Record identifier	dced8f91-23d5-45b9-8730-4fb7c3c339af
Record created	2009-09-10
Record modified	2020-03-20

Date modified:: 2024-04-20