Growth of high mobility GaN by ammonia-molecular beam epitaxy

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Journal titleApplied Physics Letters
Pages23732374; # of pages: 2
Subjectcarrier density; electron mobility; gallium compounds; III-V semiconductors; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; X-ray diffraction
AbstractThe growth of high electron mobility GaN on (0001) sapphire by ammonia molecular beam epitaxy is reported. A buffer layer of AlN < 300 Å is initially deposited by magnetron sputter epitaxy, a technique where the aluminum source is a planar dc magnetron sputter cathode and ammonia is used for the nitrogen source. The GaN epilayer is deposited using a conventional K cell for the gallium source and ammonia for the nitrogen source. The layers were doped using silane. Measured room temperature electron mobilities of 560 cm2/V s were observed for layers with carrier densities of ~ 1.5 × 1017 cm – 3. The 4 K photoluminescence spectrum showed a very strong donor bound exciton at 3.48 eV with a full width at half maximum (FWHM) of 4.9 meV. X-ray diffraction studies showed the layers to have good crystallinity with FWHM of the omega–2 theta and omega scans as low as 13.7 and 210 arcsec, respectively.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329104
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Record identifierdb5eb3ee-6e9b-481f-948e-7383d3dfaf43
Record created2009-09-10
Record modified2016-05-09
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