| DOI | Resolve DOI: https://doi.org/10.1063/1.115875 |
|---|
| Author | Search for: Piva, P. G.1; Search for: Charbonneau, S.1; Search for: Mitchell, I. V.; Search for: Goldberg, R. D. |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | time-resolved photoluminescence; photoluminescence decay; semiconductors; quantum wells; ion implantation; laser materials |
|---|
| Abstract | The effect of ion implantation induced intermixing on the effective radiative lifetimes in GaAs/AlGaAs quantum wells is investigated using the technique of time-resolved photoluminescence (TRPL). Below the critical dose, the carrier lifetimes appear enhanced by the processing although no changes are discernible in the continuous wave photoluminescence (CWPL) spectra. Above the critical dose, carrier lifetimes are reduced by residual defects created in the intermixed wells by the implantation procedure. These observations demonstrate the greater sensitivity of TRPL over CWPL in detecting residual damage produced by processing quantum well material. |
|---|
| Publication date | 1996-04-15 |
|---|
| Publisher | AIP |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 12328040 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | d9fad6af-c48c-4b06-a946-b2df9de07918 |
|---|
| Record created | 2009-09-10 |
|---|
| Record modified | 2023-05-10 |
|---|
