Tip apex shaping of gas field ion sources

  1. Get@NRC: Tip apex shaping of gas field ion sources (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1016/j.ultramic.2013.03.013
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Journal titleUltramicroscopy
Pages5660; # of pages: 5
SubjectAcceleration effects; Cold field emissions; Emission properties; Field ion microscopy; Gas field ion sources; Helium ion beams; Operating voltage; Single-atom tips; Atoms; Etching; Full width at half maximum; Helium; Ion sources; Gas industry; helium; nitrogen; article; chemical procedures; controlled study; electron microscopy; etching process; evaporation; gas field; image analysis; ionization; molecular dynamics; molecular imaging; molecular size; pressure measurement; procedures; single atom tip shaping; surface property
AbstractA procedure to control W(111) tip shape during etching to a single atom is described. It is demonstrated that the base of a single atom tip (SAT) can be shaped in order to alter the final operating voltage and emission opening angle of single atom tips for use as gas field ion sources or electron cold field emission sources. The operating voltages for single atom tips varied between 5 and 17. kV during helium ion beam generation. The emission properties of SATs were evaluated by fitting SAT images and measuring the full width at half maximum (FWHM) of the helium ion images. The FWHM is related to the linear opening angle and was evaluated as a function of SAT operating voltage. The results show that a forward focussing effect is observed such that the spot size decreases faster than is expected solely from an acceleration effect, indicating an affect from the tip shape. These results have consequences in designing gas field ion sources where etching is used to prepare the emitter. © 2013.
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AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21269938
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Record identifierd63008e2-090f-4f90-8f62-65e77a3a8335
Record created2013-12-13
Record modified2016-05-09
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