Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers

From National Research Council Canada

DOI	Resolve DOI: https://doi.org/10.1116/1.582241
Author	Search for: Bardwell, Jennifer¹; Search for: Dharma-Wardana, M¹; Search for: Tang, Haipeng¹; Search for: Webb, James²
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
Format	Text, Article
Subject	aluminium compounds; carrier density; gallium compounds; III-VI semiconductors; infrared spectra; molecular beam epitaxial growth; nucleation; phonon-plasmon interactions; reflectivity; semiconductor epitaxial layers; semiconductor superlattices; wide band gap semiconductors
Abstract	An infrared reflection technique has been developed for the characterization of GaN and GaN/AlGaN epitaxial layers and multilayers. The infrared light is brought to the III-nitride surface with a KRS-5 internal reflection crystal. The technique is complimentary to Raman measurements and provides information on the longitudinal and transverse optical (LO) modes of GaN and AlN. For thin GaN layers, the modes of the thin, 22-nm-thick AlN nucleation layer can be clearly observed in the spectra. The free carrier concentration of the GaN can be characterized by analyzing the LO phonon-plasmon coupled mode present in doped samples. Because the light is multiply reflected in the GaN layer, the technique can potentially detect impurities (such as H or C) in the GaN. The application of this technique to characterize high quality molecular beam epitaxial layers is discussed.
NPARC number	12338179
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Record identifier	d5cc95a1-d3f8-46af-aa8f-8e51b36ffae4
Record created	2009-09-10
Record modified	2020-04-16

Date modified:: 2024-04-20