Infrared characterization of GaN and GaN/AlGaN molecular beam epitaxial layers

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Subjectaluminium compounds; carrier density; gallium compounds; III-VI semiconductors; infrared spectra; molecular beam epitaxial growth; nucleation; phonon-plasmon interactions; reflectivity; semiconductor epitaxial layers; semiconductor superlattices; wide band gap semiconductors
AbstractAn infrared reflection technique has been developed for the characterization of GaN and GaN/AlGaN epitaxial layers and multilayers. The infrared light is brought to the III-nitride surface with a KRS-5 internal reflection crystal. The technique is complimentary to Raman measurements and provides information on the longitudinal and transverse optical (LO) modes of GaN and AlN. For thin GaN layers, the modes of the thin, 22-nm-thick AlN nucleation layer can be clearly observed in the spectra. The free carrier concentration of the GaN can be characterized by analyzing the LO phonon-plasmon coupled mode present in doped samples. Because the light is multiply reflected in the GaN layer, the technique can potentially detect impurities (such as H or C) in the GaN. The application of this technique to characterize high quality molecular beam epitaxial layers is discussed.
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12338179
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Record identifierd5cc95a1-d3f8-46af-aa8f-8e51b36ffae4
Record created2009-09-10
Record modified2016-09-29
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