Redox driven conductance changes for resistive memory

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1007/s00339-011-6268-5
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Affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
SubjectHydroxide ions; Oxidation state; Polaron formation; Poly-thiophene; Polymer oxidation; Resistance switching; Resistive switching memories; TiO; Conducting polymers; Conductive films; Heterojunctions; Organic conductors; Polarons; Polymer films; Raman spectroscopy; Silicon compounds; Thiophene; Titanium dioxide; Redox reactions
Abstract
Publication date
In
LanguageEnglish
Peer reviewedYes
NPARC number21272018
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Record identifierd1db0377-caff-44af-8f58-174cf52b4ebd
Record created2014-05-21
Record modified2020-04-21
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