Current blocking in InP/InGaAs double heterostructure bipolar transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.361108
AuthorSearch for: 1; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
SubjectBIPOLAR TRANSISTORS; CURRENT DENSITY; DIFFUSION LENGTH; FABRICATION; FERMI STATISTICS; GALLIUM ARSENIDES; HETEROSTRUCTURES; IMPURITIES; INDIUM ARSENIDES; INDIUM PHOSPHIDES
Abstract
Publication date
In
LanguageEnglish
NPARC number12330781
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifierd014c67a-1f39-4b67-81dd-1c8d173861f2
Record created2009-09-10
Record modified2020-03-20
Date modified: