Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.371504
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectaluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; quantum well devices; semiconductor doping
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NPARC number12338479
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Record identifiercf701487-2abf-4583-882c-0cb80cca0bb2
Record created2009-09-10
Record modified2020-03-20
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