Comparing High Mobility InGaAs FETs with Si and GOI Devices

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/DRC.2006.305130
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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NPARC number12743824
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Record identifiercb98588e-1e63-4b6e-b4b6-fe479561e8e3
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