| Download | - View accepted manuscript: Effect of an in-plane magnetic field on microwave photoresistance and Shubnikov-de Haas effect in high-mobility GaAs/AlGaAs quantum wells (PDF, 693 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1088/1742-6596/456/1/012004 |
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| Author | Search for: Bogan, A.1; Search for: Hatke, A. T.; Search for: Studenikin, S. A.1; Search for: Sachrajda, A.1; Search for: Zudov, M. A.; Search for: Pfeiffer, L. N.; Search for: West, K. W. |
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| Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Conference | 20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012, July 22-27, 2012, Chamonix Mont Blanc |
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| Subject | GaAs/AlGaAs quantum well; High mobility; High tilt angle; In-plane magnetic fields; Microwave-induced resistance oscillations; Photoresistance; Quantum scattering; Shubnikov-de Haas oscillations; Electric resistance; Magnetic fields; Semiconductor quantum wells; Shubnikov-de Haas effect; Microwave oscillators |
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| Abstract | A recent study of the decay of microwave-induced resistance oscillations (MIRO) in GaAs/AlGaAs quantum wells due to an in-plane magnetic field B ∥ has revealed the dominant role of a quadratic-in-B ∥ correction to the quantum scattering rate. In the present study, we examine the evolution of Shubnikov-de Haas oscillations (SdHO) with increasing tilt angle in the same sample. Even though we find that the SdHO also diminish at high tilt angles, this decay is qualitatively different from that of MIRO, possibly indicating a different physical origin. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21270513 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c9a4b717-dff0-4559-8d84-0ba57fff9e5e |
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| Record created | 2014-02-14 |
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| Record modified | 2020-06-04 |
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