| DOI | Resolve DOI: https://doi.org/10.1063/1.3514896 |
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| Author | Search for: Pitters, J.L.1; Search for: Livadaru, L.1; Search for: Haider, M.B.1; Search for: Wolkow, R.A.1 |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Subject | bond structures; chemical method; Coulomb repulsions; doped silicon; electronic behaviors; extended Hubbard model; filling behavior; good correlations; hydrogen-terminated silicon surfaces; net charges; quantum dots; Si(1 0 0); theoretical result; tunnel coupling; hydrogen; hydrogen bonds; dangling bonds; silicon; chemical structure; chemistry; surface properties; molecular structure |
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| Abstract | We study both experimentally and theoretically the electronic behavior of dangling bonds (DBs) at a hydrogen terminated Si(100)-2×1 surface. Dangling bonds behave as quantum dots and, depending on their separation, can be tunnel coupled with each other or completely isolated. On n-type highly doped silicon, the latter have a net charge of -1e, while coupled DBs exhibit altered but predictable filling behavior derived from an interplay between interdot tunneling and Coulomb repulsion. We found good correlation between many scanning tunneling micrographs of dangling bond structures and our theoretical results of a corresponding extended Hubbard model. We also demonstrated chemical methods to prevent tunnel coupling and isolate charge on a single dangling bond. © 2011 American Institute of Physics. |
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| Publication date | 2011 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271348 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c93457d3-db98-4723-812f-049320267a92 |
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| Record created | 2014-03-24 |
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| Record modified | 2020-04-21 |
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