Amorphous silicon driver circuits for OLED displays

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Journal titleJournal of Vacuum Science and Technology A
Pages13741378; # of pages: 5
AbstractThis article presents design considerations pertinent to amorphous silicon (a-Si:H) pixel drive circuits for mobile display applications. We describe both pixel architectures and circuit topologies that are amenable for vertically stacked organic light-emitting diode (OLED) pixels in a-Si:H technology. Here, a dual-gate transistor structure is used to minimize the parasitic coupling between the OLED and the transistor layers. We consider both the two-transistor (2-T) voltage-programmed drive circuit and the five-transistor (5-T) current-programmed drive circuit. The latter provides compensation for shifts in device characteristics by virtue of metastable shifts in the threshold voltage of the thin-film transistor (TFT). Implementation of the 5-T drive circuit using dual-gate TFTs that enables high aperture ratio (~100%), low leakage current, and surface emissive OLED pixels that are independent of scaling is also presented, along with simulation results of transfer characteristics.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744771
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Record identifierc7bc8333-24ea-4b1c-b31a-429b59ea5e5d
Record created2009-10-27
Record modified2016-05-09
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