DOI | Resolve DOI: https://doi.org/10.1149/05304.0003ecst |
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Author | Search for: Lockwood, David J.1; Search for: Wu, Xiaohua2; Search for: Baribeau, Jean-Marc2; Search for: Mala, Selina A.; Search for: Modi, Nikhil; Search for: Tsybeskov, Leonid |
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Affiliation | - National Research Council of Canada. Measurement Science and Standards
- National Research Council of Canada. Information and Communication Technologies
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Format | Text, Article |
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Conference | 223rd ECS Meeting, Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices, May 12-16, 2013, Toronto, ON, Canada |
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Subject | Carrier recombination; Electron-hole droplets; Excitation intensity; Ge concentrations; Hetero interfaces; Light emitting devices; Linear dependence; SiGe quantum wells; Nanocrystals; Photonic devices; Semiconductor quantum wells; Silicon alloys; Three dimensional; Germanium |
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Abstract | Epitaxially-grown three-dimensional Si/SiGe nanostructures (NSs) produce photoluminescence (PL) and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast (PL lifetime <20 ns) and hence more efficient SiGe light-emitting devices. The results presented here demonstrate that in such Si/SiGe 3D NSs with a nominal Ge concentration approaching ∼35% the PL peaked near 0.78 eV strongly depends on the Si/SiGe heterointerface abruptness. In other Si/SiGe NS/quantum-well samples with a Ge concentration approaching ∼40%, we find two PL bands peaked at ∼0.8 eV and ∼0.9 eV at low temperatures. The PL peaked at 0.8 eV rises and decays slowly, and it quickly saturates as the excitation intensity increases. In contrast, the PL peaked at 0.9 eV shows a much shorter lifetime and exhibits a linear dependence versus excitation intensity. The slow/delayed PL at 0.8 eV is attributed to carrier recombination at the SiGe NS/Si transition layer while the faster and more efficient PL at 0.9 eV is associated with SiGe quantum wells. More complicated and similarly fast (∼10-7 s) decays are observed at very high excitation intensities due to electron-hole droplet formation. The physics of carrier recombination in these Si/SiGe NSs is discussed. |
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Publication date | 2013 |
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Series | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21270417 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | c4579eca-6ea0-4023-a30b-b332292e497a |
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Record created | 2014-02-10 |
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Record modified | 2020-04-22 |
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