Development of GaN wafers via the ammonothermal method
Development of GaN wafers via the ammonothermal method
DOI | Resolve DOI: https://doi.org/10.1016/j.jcrysgro.2014.06.004 |
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Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
Format | Text, Article |
Conference | 8th International Workshop on Bulk Nitrides Semiconductors (IWBNS VIII), Sept. 30-Oct. 5, 2013, Seeon, Germany |
Subject | Ammonothermal method; A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B1. Semiconducting gallium compounds |
Abstract | |
Publication date | 2014-06-09 |
In | |
Language | English |
Peer reviewed | Yes |
NRC publication | This is a non-NRC publication"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC. |
NRC number | NRC-ACRD-56100 |
NPARC number | 21273793 |
Export citation | Export as RIS |
Report a correction | Report a correction (opens in a new tab) |
Record identifier | c41b9c68-a412-41e3-b2f5-af18a9c4946e |
Record created | 2015-01-21 |
Record modified | 2020-04-22 |
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