Selective growth and ordering of SiGe nanowires for band gap engineering

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/0957-4484/25/33/335303
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Affiliation
  1. National Research Council of Canada. Measurement Science and Standards
FormatText, Article
Subjectnanowires (NWs); ordering; molecular beam epitaxy (MBE); selective growth; focused ion beam (FIB) patterning; photoluminescence
Abstract
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LanguageEnglish
Peer reviewedYes
NPARC number21272879
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Record identifierc1ff37d8-aef1-4549-abea-7d6c8fc544a2
Record created2014-12-03
Record modified2020-04-22
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