Raman Characterization of Strained GaNyAs1-y and InxGa1-xNyAs1-y Epilayers

DOIResolve DOI: http://doi.org/10.1557/PROC-798-Y5.67
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Proceedings titleGaN and related alloys--2003
Series titleMaterials Research Society symposia proceedings; Volume 798
Conference2003 MRS Fall Meeting - Symposium Y – GaN and Related Alloys, 1-5 December 2003, Boston, Massachusetts, USA
Article numberY5.67
Pages# of pages: 6
AbstractPseudomorphically strained epitaxial films of the ternary alloy GaNyAs1-y have been grown on GaAs(100) with y ranging from 0 to 0.05. The optical phonon Raman spectrum of the alloy displays a two-mode behavior. The GaAs-like first order modes are represented at y = 0.05 by the strong longitudinal optic (LO1) mode at 288.5 cm-1 and the weaker transverse optic (TO1) mode at 268.3 cm-1, while the GaN-like LO2 mode is observed at 474.8 cm-1. Two very broad disorder-induced acoustic bands are evident at 80 and 170 cm-1 due to atomic disorder within the crystalline network. Raman studies show that as the nitrogen concentration increases, the GaAs-like LO1 band shifts linearly towards lower wavenumber while the GaN-like LO2 phonon band displays a sub-linear increase in wavenumber. Raman results for the unstrained quaternary alloy In0.06Ga0.94N0.02As0.98 are compared with those of GaN0.02As0.98.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12346656
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Record identifierc0f89f29-b13e-43ce-ad94-b0298f7f24e4
Record created2009-09-17
Record modified2016-05-09
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