| Download | - View accepted manuscript: Atomic size mismatch strain induced reversed ADF-STEM image contrast between dilute semiconductor heteroepitaxial layers and substrates (PDF, 957 KiB)
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| Author | Search for: Wu, X.1; Search for: Baribeau, J.-M.1; Search for: Gupta, J. A.1; Search for: Robertson, M. D. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Materials Research Society Symposium |
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| Abstract | The annular dark field (ADF) image contrast of heteroepitaxial dilute nitride GaNxAs1-x (x =0.029 and 0.045) layers on GaAs and dilute carbide Si1-yCy (y <= 0.015) layers on Si were studied with a scanning transmission electron microscope (STEM). Contradictory to the compositional contrast prediction of ADF-STEM image intensity, the lower average atomic number heteroepitaxial strained layers GaNxAs1-x and Si1-yCy are brighter than the higher average atomic number Si and GaAs substrates for ADF detector semiangle up to 92 mrad. This reversed contrast is due to the localized strain resulting from the difference in atomic size between the substitutional atoms (N, C) and host atoms (GaAs, Si). The application of the reversed ADF-STEM image contrast is discussed in relation to the evaluation of very small amount of substitutional atom compositions in dilute systems. |
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| Publication date | 2010-10-01 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17160665 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | bfc2045a-8064-4105-b867-47ae50e77c50 |
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| Record created | 2011-03-26 |
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| Record modified | 2020-04-17 |
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