| DOI | Resolve DOI: https://doi.org/10.1063/1.4772643 |
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| Author | Search for: Liu, X. Z.; Search for: Yu, G.; Search for: Wei, L. M.; Search for: Lin, T.; Search for: Xu, Y. G.; Search for: Yang, J. R.; Search for: Wei, Y. F.; Search for: Guo, S. L.; Search for: Chu, J. H.; Search for: Rowell, N. L.1; Search for: Lockwood, D. J.1 |
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| Affiliation | - National Research Council of Canada. Measurement Science and Standards
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| Format | Text, Article |
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| Subject | Anti-localization effects; Gate voltages; High mobility; High-electron-density; Interband coupling; Magneto-transport measurement; P-type; Rashba effects; Rashba spin orbit interaction; Rashba spin splitting; Weak antilocalization; Carrier concentration; Electron density measurement; Electron gas; Inversion layers |
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| Abstract | The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd 0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (∼3.0-6.0 × 1015 m-2), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system. © 2013 American Institute of Physics. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269890 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | bacfa18b-eae6-47e1-848b-64cfb7ec023f |
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| Record created | 2013-12-13 |
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| Record modified | 2020-04-22 |
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