Interfaces in Si/Ge atomic layer superlattices on (001)Si: effect of growth temperature and wafer misorientation

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.363013
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectfilm growth; germanium; interface structure; molecular beam epitaxy; raman spectra; silicon; superlattices; temperature dependence; xrd
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LanguageEnglish
Peer reviewedYes
NPARC number12327461
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Record identifierb9be5d4b-41dd-44c0-b93b-55c53dc8e8e2
Record created2009-09-10
Record modified2020-03-20
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