InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.3665223
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
SubjectBlue laser diodes; GaN substrate; Growth technologies; High-nitrogen; InGaN laser diodes; InGaN quantum wells; Light loss; Plasma assisted molecular beam epitaxy; RF plasma; Single quantum well; Threading dislocation densities; Vacuum applications; Gallium nitride
Abstract
Publication date
In
LanguageEnglish
Peer reviewedYes
NPARC number21269316
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Record identifierb7cbc727-caae-4321-ad01-288b02cccbdc
Record created2013-12-12
Record modified2020-04-21
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