Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.3583559
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Affiliation
  1. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
SubjectAccumulation modes; Accumulation threshold; Adsorption and reactions; Alkyl monolayers; Ambient atmosphere; Ambient conditions; Field-effect mobilities; Flat-band voltage; Gas-phase reactions; H-terminated surface; High vacuum; In-field; Molecular adsorption; N-channel devices; Reversible change; Sensing applications; Silicon on insulator; Adsorption; Field effect transistors; Monolayers; Semiconducting silicon; Semiconducting silicon compounds; Threshold voltage; Water vapor; Current voltage characteristics
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LanguageEnglish
Peer reviewedYes
NPARC number21271164
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Record identifierb5f29903-cb13-411e-9f88-a9b0e01e2233
Record created2014-03-24
Record modified2020-04-21
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