| Abstract | The field emission properties of lanthanum monosulfide (LaS) films, deposited on Si substrates by pulsed laser deposition, have been thoroughly analyzed via the scanning anode field emission microscopy technique. Using the conventional Fowler-Nordheim relation, the work function of LaS thin films has been extracted from the slope of the plot ln (J/F2) vs 1/F, where J is the field emission current density and F is the local applied electric field. The threshold for an emission current density of 1 mA/cm2 occurs around a 230 V/μm electric field applied across the vacuum gap. This leads to an outstanding, reproducible effective work function value of ~1 eV across a 1 cm2 sample area. |
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