DOI | Resolve DOI: https://doi.org/10.1557/PROC-441-175 |
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Author | Search for: Naftel, S. J.; Search for: Sham, T. K.; Search for: Das, S. R.1; Search for: Xu, D.-X.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Conference | 1996 MRS Fall Meeting: Thin Films - Structure and Morphology, December 2-6, 1996, Boston, Massachusetts, U.S.A. |
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Abstract | Platinum silicide films, with a typical thickness of several hundred Å, prepared on n-type Si(100) wafers by UHV mnagnetron sputter deposition followed by rapid thermal annealing, have been studied by Si L2,3-edge X-ray absorption near edge structure (XANES) using both total electron and total fluorescence yield detection. Samples of various annealing times were studied. XANES provides information on the electronic structure and morphology of the samples. By utilizing the sampling depth difference between the two detection methods, we can clearly see XANES data from each layer (eg. surface oxide, silicide) in the sample and can estimate the thickness of the oxide layer. |
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Publication date | 1997 |
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Series | |
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Language | English |
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NPARC number | 12330135 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | a66b0491-609c-44db-a224-761d8503138a |
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Record created | 2009-09-10 |
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Record modified | 2020-03-20 |
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