| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.71.125308 |
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| Author | Search for: Lopinski, G. P.1; Search for: Eves, B. J.1; Search for: Hul'ko, O.1; Search for: Mark, C.1; Search for: Patitsas, S. N.1; Search for: Boukherroub, R.1; Search for: Ward, T. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Subject | chemisorbed layers; chemisorption; chlorine; electron beam effects; electron energy loss spectra; elemental semiconductors; Hall effect; inversion layers; nanotechnology; silicon; surface conductivity; two-dimensional hole gas |
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| Abstract | Chlorine termination of low-doped, n-type Si(111) is found to lead to an increase in conductance relative to the hydrogen-terminated surface. This increase is attributed to formation of an inversion layer due to the strongly electron withdrawing character of the chemisorbed chlorine. The presence of this inversion layer is confirmed by high resolution electron energy loss spectroscopy and Hall effect measurements. Electron beam irradiation destroys the inversion layer, suggesting a route to nanoscale patterning of this 2D hole gas. |
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| Publication date | 2005-03-15 |
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| In | |
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| Language | English |
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| NPARC number | 12328087 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a084727a-9346-4541-91ff-67797d5dd44f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-07 |
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