| DOI | Resolve DOI: https://doi.org/10.1016/0022-0248(95)00363-0 |
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| Author | Search for: Lafontaine, H.; Search for: Houghton, D.; Search for: Rowell, N.1; Search for: Aers, G.2; Search for: Rinfret, R. |
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| Affiliation | - National Research Council of Canada. NRC Institute for National Measurement Standards
- National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Photoluminescence was used to measure the broadening of thin (t = 12-77 ?) SiGe quantum wells (QW) under typical RTA conditions. An anneal time of 300 s and temperatures ranging from 800 to 1000?C were used. "No phonon" SiGe transition energy shifts of up to 65 meV are measured. Results are analyzed taking into account the initial diffusion during growth, the increase in QW bandgap due to intermixing and the decrease in quantum confinement. Interdiffusivity values showing an Arrhenius behavior and an activation energy of 2.7 eV are obtained. |
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| Publication date | 1995 |
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| In | |
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| Language | English |
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| NPARC number | 12337984 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9fd6dc1c-1829-4b81-9123-00dfb118c5d0 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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