Dopant depth profiling by anodic sectioning using 0.1 M HCl electrolyte

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/1.1837225
AuthorSearch for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: ; Search for:
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectdoping profiles; electrochemistry; electrolytes; impurity distribution; oxidation; silicon
Abstract
Publication date
In
LanguageEnglish
NPARC number12338971
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier953349f6-f53a-4867-a42f-ca970950c273
Record created2009-09-11
Record modified2020-03-20
Date modified: