Al3+-doped vanadium dioxide thin films deposited by PLD

  1. (PDF, 981 KB)
  2. Get@NRC: Al3+-doped vanadium dioxide thin films deposited by PLD (Opens in a new window)
DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for: ; Search for:
Journal titleSolar Energy Materials and Solar Cells
Pages15501554; # of pages: 5
Subjectanadium dioxide; Thermochromic; Intelligent coatings
AbstractThin films of vanadium dioxide (VO2) and Al3+-doped VO2 were deposited on silicon and glass substrates using pulsed laser deposition (PLD). Optimized processing conditions were determined for depositing pure VO2 with monoclinic phase by laser ablation of a V2O5 target. Al3+-doping levels in the VO2 films were varied by altering the relative laser ablation time on the Al2O3 and V2O5 targets. The change in electrical conductivity with temperature in the semiconductor to metallic phase transition was measured for pure VO2 and Al3+-doped VO2 films. Doping the VO2 films with Al3+ lowered the transition temperature directly on increasing the Al3+ content from 67 °C for the pure VO2 films to 40 °C at 10% Al3+. The magnitude of the resistance change from semiconductor to metallic states also decreased with increase in Al3+ doping. The results imply that Al3+-doped VO2 films could be a good candidate for energy-efficient “smart window” coatings used for architecture applications.
Publication date
AffiliationNRC Industrial Materials Institute; National Research Council Canada
Peer reviewedYes
NPARC number21274380
Export citationExport as RIS
Report a correctionReport a correction
Record identifier9455a42d-d3ae-4506-a440-b056901a92b0
Record created2015-03-11
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)
Date modified: