| DOI | Resolve DOI: https://doi.org/10.1002/1521-396X(200111)188:1<271::AID-PSSA271>3.0.CO;2-T |
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| Author | Search for: Webb, J.1; Search for: Tang, Haipeng1; Search for: Bardwell, J. A.1; Search for: Rolfe, S.1; Search for: Liu, Ying1; Search for: Lapointe, J.1; Search for: Marshall, P.1; Search for: MacElwee, T. W. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The growth of GaN/AlGaN high electron mobility transistor structures (HEMT) on 4H‐SiC by ammonia molecular beam epitaxy (a‐MBE) is reported. Structures were grown using a magnetron sputter epitaxy deposited AlN buffer layer prior to the MBE growth of a carbon‐doped insulating GaN isolation layer, undoped GaN channel layer and AlGaN cap layer. No ex‐situ or in‐situ high temperature pre‐treatment of the SiC substrate was used. The electrical characteristics of the layers was excellent with RT mobilities of >1100 cm²/Vs for a sheet carrier density of >1 × 10¹³ cm⁻². HEMTs fabricated from layers gave an fₜ and fₘₐₓ of 36 and 80 GHz, respectively with a maximum saturated drain current of 450 mA/mm and transconductance of 160 mS/mm for a gate length of 0.3 μm. |
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| Publication date | 2001-11-22 |
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| Publisher | Wiley |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12337880 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 93b1e505-7d3b-4ef8-984a-50c8859e3424 |
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| Record created | 2009-09-10 |
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| Record modified | 2022-03-10 |
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