Download | - View accepted manuscript: Copper tungstate thin-films for nitric oxide sensing (PDF, 663 KiB)
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DOI | Resolve DOI: https://doi.org/10.1016/j.snb.2012.06.067 |
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Author | Search for: Gonzalez, C. M.1; Search for: Du, X.1; Search for: Dunford, J. L.1; Search for: Post, M. L.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Chemical Process and Environmental Technology
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Format | Text, Article |
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Subject | Electrochemical sensors; Conductometric sensors; Gas sensors; NOx sensors; Gas-phase pollutants; Environment monitoring technologies; Thin-films; Semiconducting metal-oxides |
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Abstract | CuWO4 thin-films prepared by the pulsed laser deposition technique were studied for monitoring nitric oxide (NO) in the concentration range of 10 < [NO] < 400 ppm under synthetic air. The thin-film films were characterized by X-ray diffraction (XRD), depth-profilometry and electron transport measurements. The CuWO4 thin-film response to O2 confirmed an n-type conductivity. Monitoring the thin-film conductometric response to NO at both 300 and 500 °C revealed the operation of a temperature-dependent mechanism for detection. At 300 °C, increasing [NO] produced a consistent increment in thin-film resistance, while at 500 °C the thin-film resistance decreased with [NO]. At 500 °C, a transient response was systematically observed. The chemical origin of the transient is discussed. The estimation of response factors to NO exposure in the presence of high [O2] indicates a significantly higher selectivity to NO. Extensive conductometric measurements show that the thin-films feature good electronic and thermal stability over time. |
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Publication date | 2012-07-08 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NRC number | NRCC 53072 |
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NPARC number | 21022826 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 91216a28-404e-4d8c-809a-1dc56372b15f |
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Record created | 2012-11-23 |
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Record modified | 2020-04-21 |
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