Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
| DOI | Resolve DOI: https://doi.org/10.1063/1.1368185 |
|---|---|
| Author | Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 2001 |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NPARC number | 12744514 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 9088d714-602b-48bf-a95c-5bc5e17c220a |
| Record created | 2009-10-27 |
| Record modified | 2023-05-10 |
- Date modified: