DOI | Resolve DOI: https://doi.org/10.1063/1.119058 |
---|
Author | Search for: Allard, L. B.1; Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
---|
Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
---|
Format | Text, Article |
---|
Subject | aluminium compounds; CCD image sensors; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; optical frequency conversion; photodetectors; semiconductor epitaxial layers; semiconductor quantum wells |
---|
Abstract | We present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelength p-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed. |
---|
Publication date | 1997-05-26 |
---|
In | |
---|
Language | English |
---|
NPARC number | 12337918 |
---|
Export citation | Export as RIS |
---|
Report a correction | Report a correction (opens in a new tab) |
---|
Record identifier | 9041a654-91cd-4e59-9ecd-6a6aa868dc7e |
---|
Record created | 2009-09-10 |
---|
Record modified | 2020-03-20 |
---|