Bias Stress Measurements on High Performance AlGaN/GaN HFET Devices

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1002/1521-396X(200111)188:1<233::AID-PSSA233>3.0.CO;2-0
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
PublisherWiley
In
LanguageEnglish
Peer reviewedYes
NPARC number12744530
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Record identifier8e729b97-8eca-462f-914f-deb0c1bf1ddc
Record created2009-10-27
Record modified2020-03-27
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