| DOI | Resolve DOI: https://doi.org/10.1149/05041.0035ecst |
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| Author | Search for: Lockwood, David J.1; Search for: Wu, Xiaohua2; Search for: Baribeau, Jean-Marc2; Search for: Modi, Nikhil; Search for: Tsybeskov, Leonid |
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| Affiliation | - National Research Council of Canada. Measurement Science and Standards
- National Research Council of Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Conference | PRiME 2012: Pits and Pores 5: A Symposium in Honor of David Lockwood, October 7-12, 2012, Honolulu, Hawaii |
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| Subject | Carrier recombination; CMOS Compatible; Light emitters; Light emitting devices; Si/SiGe; Silicon Germanium; Spectral range; Germanium; Light; Silicon alloys; Nanostructures |
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| Abstract | Epitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21270071 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8c5096bb-75eb-4252-a75a-ebe00543dd02 |
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| Record created | 2013-12-19 |
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| Record modified | 2020-04-22 |
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