Fast luminescence in silicon-germanium nanostructures

  1. Get@NRC: Fast luminescence in silicon-germanium nanostructures (Opens in a new window)
DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for:
Proceedings titleLuminescence and Display Materials: Fundamentals and Applications
ECS Transactions
ConferencePRiME 2012: Pits and Pores 5: A Symposium in Honor of David Lockwood, October 7-12, 2012, Honolulu, Hawaii
Pages3547; # of pages: 13
SubjectCarrier recombination; CMOS Compatible; Light emitters; Light emitting devices; Si/SiGe; Silicon Germanium; Spectral range; Germanium; Light; Silicon alloys; Nanostructures
AbstractEpitaxially-grown three-dimensional Si/SiGe nanostructures produce photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. We show that by controlling and modifying such Ge-rich SiGe nanoclusters during growth it is possible to fabricate very fast and hence more efficient SiGe light-emitting devices. The physics of carrier recombination in these Si/SiGe nanostructures is discussed. The present results provide another possible route toward CMOS compatible light emitters.
Publication date
AffiliationMeasurement Science and Standards; Information and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270071
Export citationExport as RIS
Report a correctionReport a correction
Record identifier8c5096bb-75eb-4252-a75a-ebe00543dd02
Record created2013-12-19
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)
Date modified: