| DOI | Resolve DOI: https://doi.org/10.1063/1.111584 |
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| Author | Search for: Allard, L. B.1; Search for: Aers, G. C.1; Search for: Piva, P. G.1; Search for: Poole, P. J.1; Search for: Buchanan, M.1; Search for: Templeton, I. M.1; Search for: Jackman, T. E.1; Search for: Charbonneau, S.1; Search for: Akano, U.; Search for: Mitchell, I. V. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We have determined the threshold dose for 8 MeV Bi+ ions to induce intermixing of GaAs quantum wells in AlGaAs and InGaAs quantum wells in GaAs after rapid thermal annealing at 850 �C. Our measured threshold for the GaAs/AlGaAs system agrees well with previous work. The threshold for the InGaAs/GaAs system is much lower and explains, at least in part, earlier difficulties in the lateral patterning of nanostructures by focused-ion-beam lithography. |
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| Publication date | 1994-05-02 |
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| In | |
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| Language | English |
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| NPARC number | 12337877 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8b757548-4e70-4c19-9724-1c7ec27619dc |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-27 |
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