Download | - View accepted manuscript: Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height (PDF, 640 KiB)
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DOI | Resolve DOI: https://doi.org/10.1364/OL.37.001103 |
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Author | Search for: Haffouz, S.1; Search for: Barrios, P. J.1; Search for: Normandin, R.; Search for: Poitras, D.1; Search for: Lu, Z.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Abstract | An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuouswave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively. |
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Publication date | 2012-03-15 |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 19649692 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 88778dd3-9c1c-448b-9425-c886829bbf17 |
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Record created | 2012-03-15 |
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Record modified | 2020-04-21 |
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