"Gentle lithography" with benzene on Si(100)

  1. Get@NRC: "Gentle lithography" with benzene on Si(100) (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.1526459
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Journal titleApplied Physics Letters
Pages44224424; # of pages: 3
Subjectelectron beam lithography; elemental semiconductors; nanotechnology; organic compounds; scanning tunnelling microscopy; silicon
AbstractA scanning tunneling microscopy (STM) based nanolithographic method has been demonstrated. The previously reported tip-induced desorption of benzene from Si(100) was utilized to pattern the surface with close to atomic precision. This kind of lithography can take place under very mild conditions. Writing occurs with a STM tip bias of 2.8 V. No heating, etching, or exposure to photons is required. The method is best suited for small to medium sized molecules and can be said to be reliable for resolutions of 2 nm and above. In this letter, we have demonstrated patterning areas of the surface with ethylene and vinyl ferrocene.
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AffiliationNRC Steacie Institute for Molecular Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12333698
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Record identifier86fc013e-0ff7-4d14-ab0f-f60ccd9ce2e3
Record created2009-09-10
Record modified2016-05-09
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