One-flux analysis of current blocking in double-heterostructure bipolar transistors with composite collectors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.361107
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectaccumulation layers; bipolar transistors; current density; graded band gaps; heterostructures; iv characteristic
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PublisherAIP
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LanguageEnglish
Peer reviewedYes
NPARC number12329067
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Record identifier80a5d929-de59-42f6-8b77-00b9daa4d60f
Record created2009-09-10
Record modified2020-03-20
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