On the carrier concentration and Hall mobility in GaN epitaxial layers

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1143/JJAP.41.L226
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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NPARC number12328921
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Record identifier7cac495d-5352-46a5-b318-5a0089e827ac
Record created2009-09-10
Record modified2020-04-06
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