Formation and properties of porous GaAs

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Proceedings title1996 MRS Spring Meeting - Symposium P – Microporous and Macroporous Materials
Series titleMaterials Research Society Symposia Proceedings; no. 431
Conference1996 MRS Spring Meeting: Symposium P: Microporous and Macroporous Materials, April 8-11, 1996, San Francisco, California, U.S.A.
Pages431439; # of pages: 9
AbstractPorous structures on n-type GaAs (100) can be grown electrochemically in chloridecontaining solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existence of a critical onset potential for pore formation (PFP). The PFP is strongly dependent on the doping level of the sample and the presence of surface defects. Good agreement between the PFP and the breakdown voltage of the space charge layer is found. Surface analytical investigations by EDX, AES and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only be observed after attack has been initiated. Photoluminescence measurements reveal – under certain conditions – visible light emission from the porous structure.
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12327354
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Record identifier7c4318b0-2479-459e-9e91-bdd40c0c4fc4
Record created2009-09-10
Record modified2016-05-09
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