DOI | Resolve DOI: https://doi.org/10.1016/0039-6028(94)00725-X |
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Author | Search for: Xia, H.; Search for: Lennard, W. N.; Search for: Massoumi, G. R.; Search for: van Eck, J. J. J.; Search for: Huang, L. J.; Search for: Lau, W. M.; Search for: Landheer, D.1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Subject | Chalcogens; Gallium arsenide; High energy ion scattering (HEIS); Ion-solid interactions; Low index single crystal surfaces; Sulphides |
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Abstract | Particle-induced X-ray emission measurements combined with Rutherford backscattering spectrometry (including channeling) have been used to measure directly the total sulphur coverage for the S-passivated GaAs(100) surface. The ion-induced X-ray measurements show that 1.1 ML (1 ML = 6.26 × 1014 cm−2) of S is found on GaAs(100) after passivation with (NH4)2S, while only 0.55 ML of S is present on the H2Sx-treated GaAs(100) surface. A clearer picture of the S-covered GaAs(100) surface emerges from a consideration of these data in conjunction with current models encompassing surface dimers. |
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Publication date | 1995-02-10 |
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In | |
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Language | English |
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NPARC number | 12328783 |
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Export citation | Export as RIS |
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Record identifier | 79609157-b2b7-4393-909d-913ac5e4dbbe |
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Record created | 2009-09-10 |
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Record modified | 2020-04-29 |
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